Manufacturing method for an electron-emitting source of...

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Reexamination Certificate

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C430S319000

Reexamination Certificate

active

06705910

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates in general to a manufacturing method for an electron-emitting source. In particular, the present invention relates to a manufacturing method for an electron-emitting source of triode structure.
2. Description of the Related Art
The method of manufacturing an electron-emitting source using carbon nanotubes (CNT) as an emitter is already widely used in the field of FED (field emission display) diode structure. However, in the field of the CNT-FED of triode structure, it is very difficult to coat the CNT on the negative electrode because the gate hole in the above triode structure is smaller than 100 &mgr;m. Therefore, it is very important to find an improved method to accurately coat the CNT on negative electrode.
SUMMARY OF THE INVENTION
The present invention is intended to overcome the above-described disadvantages.
Therefore, the first object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer wherein the opening has a surrounding region and forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing; and executing a thermal process step, and removing the hydrophobic layer.
According to the present invention as described above, carbon nanotubes are accurately deposited over a large area using ink jet printing.
The second object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a sacrificial layer on the gate layer and the surrounding region, wherein the opening and the cathode layer are exposed, dispersing a carbon nanotube solution in the opening using screen printing, executing a thermal process step, and removing the sacrificial layer.
According to the present invention as described above, carbon nanotubes are successfully deposited over a large area using screen printing.
The third object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a carbon nanotube photoresist layer on the gate layer and covering the opening using spin coating, and patterning the carbon nanotubes photoresist layer in a predetermined pattern, and executing a thermal process step.
According to the present invention as described above, carbon nanotubes are successfully deposited over a large area using spin coating.
The fourth object of the present invention is to provide a manufacturing method for an electron-emitting source of triode structure, comprising the steps of forming a cathode layer on a substrate forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a sacrificial layer on the gate layer and the surrounding region, wherein the opening is exposed, forming an adhesive layer in the opening, forming a carbon nanotube layer on the adhesive layer using an electrophoretic deposition step, executing a thermal process step, and removing the sacrificial layer.
According to the present invention as described above, carbon nanotubes are accurately deposited over a large area using electrophoretic deposition (EPD).


REFERENCES:
patent: 6239547 (2001-05-01), Uemura et al.
patent: 6290564 (2001-09-01), Talin et al.
patent: 6440761 (2002-08-01), Choi
patent: 6465132 (2002-10-01), Jin
patent: 6512235 (2003-01-01), Eitan et al.
patent: 6616497 (2003-09-01), Choi et al.

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