Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-03-15
2009-12-15
Coleman, W. David (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE21414
Reexamination Certificate
active
07632694
ABSTRACT:
A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.
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Chen Cheng-Chung
Chen Cheng-Hsing
Chen Chia-Hsiang
Chu Te-Ming
Huang Yi-Hsun
AU Optronics Corp.
Chi Mei Optoelectronics Corp.
Chunghwa Picture Tubes Ltd.
Coleman W. David
Crawford Latanya
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