Manufacturing method for a semiconductor device

Details Manufacturing method for a semiconductor device Manufacturing method for a semiconductor device

2006-06-01

2008-08-12

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

75, C156S345170

Reexamination Certificate

active

07410908

ABSTRACT:
A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface, a side surface, a rear surface on the side opposite the active surface, and a plurality of semiconductor elements formed on the active surface; forming the side surface of the semiconductor wafer so that an angle defined by at least a portion of the side surface of the semiconductor wafer and the rear surface of the semiconductor wafer becomes an acute angle; and performing a spin etching in which etching liquid is dripped onto the rear surface of the semiconductor wafer while blowing air toward the active surface of the semiconductor wafer and toward the side surface of the semiconductor wafer and while rotating the semiconductor wafer.

REFERENCES:
patent: 2002/0026985 (2002-03-01), Kai
patent: 2002/0048907 (2002-04-01), Miyamoto et al.
patent: 2004/0080047 (2004-04-01), Wada et al.
patent: 2005/0257889 (2005-11-01), Yamasaki et al.
patent: 2004-064040 (2004-02-01), None
patent: 2004-363154 (2004-12-01), None

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