Manufacturing method for a self-aligned through hole and semicon

Details Manufacturing method for a self-aligned through hole and semicon Manufacturing method for a self-aligned through hole and semicon

1993-09-17

1995-07-11

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257773, 257618, 257510, 257296, H01L 2348, H01L 2944

Patent

active

054323819

ABSTRACT:
A self-aligned through hole (5), particularly a bit line through hole to a source/drain region (2) that is self-aligned relative to the word line, is produced in neighboring word lines (3a) having a greater spacing from one another in the proximity of the source/drain region than at other locations. Narrow spacings are completely filled by surface-wide deposition of an insulating intermediate layer and subsequent, anisotropic etching, whereas insulating spacers (4") are formed in enlarged interspaces at side walls of the encapsulated word lines (3) and thereby form a self-aligned through hole.

REFERENCES:
patent: 5043781 (1991-08-01), Nishiura et al.
patent: 5094900 (1992-03-01), Langley
IBM Technical Disclosure Bulletin, vol. 31, No. 2, Jul. 1988, "Process for Making Conductive Lines of Two Different Materials Within a Level of Wiring", (1988) pp. 34-35.
IEEE Journal of Solid-State Circuits, vol. SC-18, No. 3, Jun. 1983, "A 256 kbit ROM with Serial ROM Cell Structure", Roger Cuppens et al., pp. 340-344.
Symposion in VLSI Technology 1987, Japan, "A High Density 4Mbit dRAM Process Using a Fully Overlapping Bitline Contact (FoBIC) Trench Cell", by Kuesters et al, pp. 93-94.
Research Disclosure 32246, Anonomous, "Substrate Contact with Closed Bottom Trenches," Feb. 1991.

Affiliated with

Also associated with

Rating

Manufacturing method for a self-aligned through hole and semicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for a self-aligned through hole and semicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for a self-aligned through hole and semicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-505166