Fishing – trapping – and vermin destroying
Patent
1990-12-03
1992-03-03
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
357 34, 148DIG10, H01L 21265, H01L 2970
Patent
active
050932721
ABSTRACT:
Method for manufacturing a self-aligned emitter-base complex whereby a sequence of epitaxial layers, which corresponds to the optimal base-emitter layer sequence in the re-etched part of the heterobipolar transistor is grown. Subsequently, the base implantation is introduced using a dummy-emitter as a mask. Using a dielectric mask covering the region not covered by the dummy-emitter, after the removal of the dummy-emitter the emitter contact layers are selectively grown in its region. The contacting is then provided.
REFERENCES:
patent: 4711701 (1987-12-01), McLevige
patent: 4868633 (1989-09-01), Plumton et al.
"GaAs/(GaAl) As Heterojunciton Bipolar Transistors Using a Self-Aligned Substitutional Emitter Process" by M. F. Chang et al., 8179 IEEE Electron Device Letters, EDL-7, No. 1, Jan. 1986, New York, pp. 8-10.
Hoepfner Joachim
Tews Helmut
Zwicknagl Hans-Peter
Chaudhuri Olik
Pham Long
Siemens Aktiengesellschaft
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