Manufacturing method for a planar photodiode with hetero-structu

Details Manufacturing method for a planar photodiode with hetero-structu Manufacturing method for a planar photodiode with hetero-structu

1983-06-17

1985-03-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

357 17, 357 30, 29572, 29576E, 148187, H01L 3106

Patent

active

045057656

ABSTRACT:
In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the epitaxial layers is employed as a selectively etchable mask for generating a pn junction of the diode.

REFERENCES:
patent: 3780358 (1973-12-01), Thompson
patent: 4383266 (1983-05-01), Sakai et al.
patent: 4411732 (1983-10-01), Witherspoon
"Electronic Letters", vol. 16, (1980), pp. 163-165.
"IEEE Journal of Quantum Electronics", vol. 17, (1981), pp. 260-264.
"Applied Physics Letters", vol. 39, (1981), pp. 402-404.

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