Fishing – trapping – and vermin destroying
Patent
1992-02-18
1993-06-15
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 49, 148DIG106, H01L 21266
Patent
active
052197751
ABSTRACT:
A manufacturing method of a semiconductor memory device includes the steps of selectively forming a field oxide film and a gate oxide film on a semiconductor substrate, depositing a first conductive layer on an entire surface of the resultant structure, selectively etching the first conductive layer located in a region other than an element region, depositing a second conductive layer on an entire surface of the resultant structure, and etching the first conductive layer and the second conductive layer using the same mask to form a plurality of floating gates by the first conductive layer and to form a plurality of control gates by the second conductive layer, wherein the step of selectively etching the first conductive layer includes the first etching step of forming cell slits for separating the plurality of floating gates from each other and the second etching step of forming removed regions each of which includes only one end of each of the plurality of control gates.
REFERENCES:
patent: 4317273 (1982-03-01), Guterman et al.
patent: 4720323 (1988-01-01), Sato
patent: 4852062 (1989-07-01), Baker et al.
patent: 4957877 (1990-09-01), Tam et al.
Chida Nobuyoshi
Matsumoto Osamu
Mizutani Takahide
Saeki Yukihiro
Shigematsu Tomohisa
Chaudhari C.
Hearn Brian E.
Kabushiki Kaisha Toshiba
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