Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Reexamination Certificate
2005-06-14
2005-06-14
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
C117S079000, C117S928000, C117S929000
Reexamination Certificate
active
06905544
ABSTRACT:
The invention has as an object proving a carbon nanomaterial fabrication method that can continuously mass-produce a high purity carbon a nanomaterial. The tube-shaped or fiber-shaped carbon nanomaterial having carbon as the main constituent is fabricated with a compound that includes carbon (raw material) and an additive that includes a metal by using a fluidized bed reactor.
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Fujioka Yuichi
Hachiya Akihiro
Kobayashi Norihisa
Nishida Ryoichi
Nishino Hitoshi
Hiteshew Felisa
Mitsubishi Heavy Industries Ltd.
Osaka Gas Co. Ltd.
Wenderoth , Lind & Ponack, L.L.P.
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