Manufacturing method and semiconductor device with low contact r

Details Manufacturing method and semiconductor device with low contact r Manufacturing method and semiconductor device with low contact r

1997-04-01

2000-04-18

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257774, 257761, 257763, 257764, 257377, 257382, 257383, H01L 2348, H01L 2352, H01L 2976, H01L 2994

Patent

active

060518839

ABSTRACT:
In a semiconductor device such as a thin film transistor a semiconductor region is formed and an insulating film is formed on the semiconductor region to have a contact hole extending to the semiconductor region. An electrically conductive metal layer is formed of aluminum to fill the contact hole. An electrically conductive protection layer is formed on the metal layer to prevent oxidation of the metal layer during manufacturing of the semiconductor device. Material of the protection layer is more difficult to be oxidized than aluminum. A transparent electrode is formed on the protection layer such that the electrode is electrically connected to the semiconductor region. The protection layer may be formed of titanium or a laminate layer of a titanium layer and a titanium nitride layer.

REFERENCES:
patent: 5650664 (1997-07-01), Sakamoto
T. Shimada et al.; "A Study of Poly-Si TFT LCD with Very Small Pixel Size and High Aperture Ratio"; Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 641-643.

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