Manufacturing method and semiconductor device with low contact r

Details Manufacturing method and semiconductor device with low contact r Manufacturing method and semiconductor device with low contact r

1999-01-22

2000-08-01

Nelms, David

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 438164, 438613, H01L 2100, H01L 2184

Patent

active

06096572&

ABSTRACT:
In a semiconductor device such as a thin film transistor, a semiconductor region is formed and an insulating film is formed on the semiconductor region to have a contact hole extending to the semiconductor region. An electrically conductive metal layer is formed of aluminium to fill the contact hole. An electrically conductive protection layer is formed on the metal layer to prevent oxidation of the metal layer during manufacturing of the semiconductor device. Material of the protection layer is more difficult to be oxidized than aluminium. A transparent electrode is formed on the protection layer such that the electrode is electrically connected to the semiconductor region. The protection layer may be formed of titanium or a laminate layer of a titanium layer and a titanium nitride layer.

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T. Shimada et al.; "A Study of Poly-Si TFT LCD with Very Small Pixel Size and High Aperture Ratio"; Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Yokohama, 1991, pp. 641-643.
Japanese Office Action dated May 12, 1998 with English language translation of Japanese Examiner's comments.

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