Manufacturing method and manufacturing system of...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S022000, C382S144000, C382S148000, C382S149000, C382S151000

Reexamination Certificate

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08043772

ABSTRACT:
In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of the measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of the estimated resist dimension and focus position. Then, an exposure dose is calculated with considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using the calculated exposure dose and focus offset value.

REFERENCES:
patent: 2002-190443 (2002-07-01), None
patent: 2002-353104 (2002-12-01), None
patent: 2003-257838 (2003-09-01), None
patent: 2004-281557 (2004-10-01), None
patent: 2005-109016 (2005-04-01), None
patent: 200-30466 (2006-02-01), None
patent: 2006-128572 (2006-05-01), None
patent: 2007-115784 (2007-05-01), None

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