Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2006-10-10
2006-10-10
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S612000, C438S508000, C029S833000, C029S834000, C228S108000
Reexamination Certificate
active
07118939
ABSTRACT:
A formation surface of electrodes and a formation surface of leads are imaged along an axis which intersects an XY plane at right angles. A projected image of the formation surface of the electrodes and the formation surface of the leads is obtained, the projected image being projected onto a plane which intersects the Z axis at right angles. A difference between an image of one of the electrodes and an image of one of the leads in the projected image is calculated. A deformation value of at least one of a substrate and a semiconductor chip due to expansion or shrinkage is calculated, the deformation value being necessary for eliminating the difference. A change in temperature of at least one of the substrate and the semiconductor chip is calculated the change in temperature being necessary for obtaining the deformation value. The temperature of at least one of the substrate and the semiconductor chip is changed based on the change in temperature.
REFERENCES:
patent: 6699737 (2004-03-01), Tojo et al.
patent: A 2001-298046 (2001-10-01), None
patent: A 2003-124262 (2003-04-01), None
Hoang Quoc
Oliff & Berridg,e PLC
Seiko Epson Corporation
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