Manufacturing integrated circuits containing P-channel MOS trans

Details Manufacturing integrated circuits containing P-channel MOS trans Manufacturing integrated circuits containing P-channel MOS trans

1987-01-22

1988-01-26

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 41, 437 59, 437 60, 437151, H01L 2138, H01L 21425

Patent

active

047216867

ABSTRACT:
This method, requiring a smaller number of masking steps with respect to the known methods, comprises boron implant on the surface of an epitaxial layer, without masking, and arsenic implant in predetermined locations of the epitaxial layer surface by means of an appropriate mask. A subsequent thermal treatment then leads to diffusion of the implanted arsenic and boron atoms, but boron diffusion in the regions in which arsenic implant has also occurred is prevented by the interaction with the latter, to thereby obtain regions with an N.sup.+ type conductivity where both boron and arsenic have been implanted and regions of P type conductivity where only boron has been implanted.

REFERENCES:
patent: 3667006 (1972-05-01), Ruegg
patent: 3915767 (1975-10-01), Welliver
patent: 4087900 (1978-05-01), Yiannoulos
patent: 4263067 (1981-04-01), Takahashi et al.
patent: 4404048 (1983-09-01), Vogelzang
patent: 4435895 (1984-03-01), Parillo et al.
patent: 4485552 (1984-12-01), Magdo et al.

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