Manufacturing high purity/low chlorine content silicon by feedin

Details Manufacturing high purity/low chlorine content silicon by feedin Manufacturing high purity/low chlorine content silicon by feedin

1990-03-06

1991-12-31

Beck, Shrive

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

427213, 427215, 427255, 4272551, 4272552, C01B 3302

Patent

active

050770284

ABSTRACT:
A method of manufacturing high-purity silicon crystals, which comprises depositing silicon on the surface of high-purity silicon particles, while feeding into a fluidized bed reactor at a high temperature a material gas consisting of high purity chlorosilane and a diluting gas, said method having a silicon deposition rate in excess of about 0.4 .mu.m/min.

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patent: 4684513 (1987-08-01), Iya
patent: 4868013 (1989-09-01), Allen
patent: 4900411 (1990-02-01), Poong et al.

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