Manufacturing green light emitting diodes

Details Manufacturing green light emitting diodes Manufacturing green light emitting diodes

1985-02-22

1987-06-09

Chaudhuri, Olik

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148DIG66, 29569L, 357 17, H01L 21208, H01L 3300

Patent

active

046718290

ABSTRACT:
In a method of manufacturing pure green light emitting diodes, after an n-type GaP epitaxial layer with thickness larger than or equal to a value for which the density of dislocation on the surface becomes less than or equal to 1.times.10.sup.4 cm.sup.-2 is grown on an n-type GaP substrate, a p-type GaP epitaxial layer is grown on the above n-type epitaxial layer. Even with the use of a GaP substrate with normal dislocation density, the density of dislocation in the neighborhood of the p-n junction becomes low and therefore GaP green light emitting diodes with high intensity of light emission are obtained.

REFERENCES:
patent: 4303464 (1981-12-01), Suzuki et al.
Keller, Materials, Properties and Preparation North-Holland Publishing Co. 1980, Amsterdam, pp. 462-463.
Sugiura et al., "Low Temperature Growth of GaP LPE Layer from in Solvent" J. of Crystal Growth 46 (1979) 595-600.

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