Manufacturing equipment of SiC single crystal and method for...

Details Manufacturing equipment of SiC single crystal and method for... Manufacturing equipment of SiC single crystal and method for...

2008-01-01

2008-01-01

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S015000, C117S201000, C117S218000

Reexamination Certificate

active

07314523

ABSTRACT:
A method for manufacturing a SiC single crystal from a SiC seed crystal is provided. The method includes the steps of: measuring a diameter of the SiC single crystal during a crystal growth of the SiC single crystal; and controlling the diameter of the SiC single crystal to be a predetermined diameter on the basis of the measured diameter. The method provides the SiC single crystal with high quality and large size.

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patent: 6583810 (2003-06-01), Yamamura
patent: 6726764 (2004-04-01), Mutti et al.
patent: 2004/0194694 (2004-10-01), Sugiyama et al.
patent: A-6-298594 (1994-10-01), None
patent: A-2001-226197 (2001-08-01), None

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