Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Reexamination Certificate
2007-06-08
2011-11-15
Song, Matthew (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
C117S200000, C117S204000, C117S206000, C117S216000, C117S217000, C117S222000
Reexamination Certificate
active
08057598
ABSTRACT:
Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.
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Cho Young Sang
Kim Young Jo
Cantor & Colburn LLP
Song Matthew
LandOfFree
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