Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-02-20
2007-02-20
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S144000, C438S148000, C257SE21617
Reexamination Certificate
active
11091722
ABSTRACT:
A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.
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Anthony Michael P.
Grant Wesley
Kohler Edward
Kushner Lawrence J.
Sollner Gerhard
Hamilton Brook Smith & Reynolds P.C.
Kenet, Inc.
Lindsay, Jr. Walter
Ullah Elias
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