Fishing – trapping – and vermin destroying
Patent
1993-10-06
1994-04-26
Quach, T. N.
Fishing, trapping, and vermin destroying
437192, 437194, 437195, 437944, 148DIG104, H01L 21283
Patent
active
053066650
ABSTRACT:
As a stack of a patterned film and an overlying conductor film, a conductor pattern is manufactured on an isolation layer of a semiconductor device by forming a two-film layer of a first conductor film and a semiconductor film, patterning the two-film layer in compliance with the conductor pattern into a patterned layer consisting of the patterned film and a semiconductor pattern and having a layer side surface, forming an insulator side wall on the side surface, etching away the semiconductor pattern, and selectively forming a second conductor film as the overlying conductor film. The side wall is used in preventing, when the second conductor film is selectively grown, undesirable lateral growth. Typically, the first and the second conductor films are made of aluminium to thicknesses of 200 and 400 nm and the semiconductor film, of polysilicon to a thickness of 400 nm.
REFERENCES:
patent: 4824796 (1989-04-01), Chiu et al.
patent: 4871419 (1989-10-01), Nakano
patent: 5177026 (1993-01-01), Ishikawa
patent: 5187121 (1993-02-01), Cote et al.
J. L. Yeh et al., "Applications of Selective Tungsten on Aluminum in Multilevel Metal Technologies", V-MIC Conference held by the IEEE on Jun. 15-16, 1987, pp. 132-137.
NEC Corporation
Quach T. N.
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