Manufacturing a gallium arsenide solar cell on a silicon substra

Details Manufacturing a gallium arsenide solar cell on a silicon substra Manufacturing a gallium arsenide solar cell on a silicon substra

1991-04-12

1992-09-08

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136256, 136262, 437126, 437132, 437976, H01L 3118, H01L 310328

Patent

active

051457938

ABSTRACT:
A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conducitivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate.

REFERENCES:
patent: 4830984 (1989-05-01), Purdes
Ackaert et al, "Crack Formation And Thermal Stress Relaxation of GaAs On Si Growth By Metalorganic Vapor Phase Epitaxy", Applied Physics Letters, vol. 55, No. 2, 1989, pp. 2187-2189.
O'Hara et al, "High Efficiency GaAs Solar Cells Fabricated On Si Substrates", IEEE Photovoltaic Specialists Conference, 1987, pp. 329-344.
Ackaert et al, "Crack Formation . . . Vapor Phase Epitaxy", Applied Physics Letters, vol. 55, No. 21, 1989, pp. 2187-2189.

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