Liquid crystal cells – elements and systems – Nominal manufacturing methods or post manufacturing...
Patent
1996-04-12
1999-08-10
Bovernick, Rodney
Liquid crystal cells, elements and systems
Nominal manufacturing methods or post manufacturing...
349149, 349151, 349 46, G02F 113, G02F 11345, G02F 1136
Patent
active
059366982
ABSTRACT:
In an active matrix liquid crystal display device, gate lines in thin-film integrated circuits constituted of thin-film transistors are formed with aluminum. In forming the gate lines, before patterning a starting film of the gate lines, slits are formed in regions where hillock and whiskers, if they should occur, would cause crosstalk or short-circuiting, and portions of the gate lines within the slits are anodized. Wiring lines are formed by utilizing the regions where the slits were formed. As a result, there can be solved problems that undesired stress would otherwise occur during anodization and that currents large enough for anodization could not be supplied due to a complex wiring pattern. Gate lines in a pixel area are subjected to a separate anodization step.
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Bovernick Rodney
Chowdhury Tarifur R.
Semiconductor Energy Laboratory Co,. Ltd.
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