Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-06-10
1984-08-21
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29580, 148187, 148190, H01L 21265
Patent
active
044661754
ABSTRACT:
A vertical insulated gate field effect transistor is made by providing a polycrystalline semiconductor layer on an insulating layer at a surface of an n-type semiconductor body, and thereafter forming gates of the IGFET by laterally diffusing a p-type impurity into the polycrystalline semiconductor layer below two opposite edges of a masking layer. A p-type zone and an n-type source zone are then formed at the surface of the semiconductor body by introducing the relevant impurities in the presence of the masking layer, and then by laterally diffusing these impurities below the gate with the p-type impurities for the p-type zone diffusing laterally farther beneath the gate than the n-type impurities of the source zone. The lateral extent of the source zone, the p-type zone, and the gates can all be predetermined in relation to the same edge of the masking layer which enables improved gate-channel alignment, and so minimizes Miller capacitance of the IGFET.
REFERENCES:
patent: 3919007 (1975-11-01), Tarui et al.
patent: 3923553 (1975-12-01), Hayashi et al.
patent: 4272881 (1981-06-01), Angle
patent: 4287660 (1981-09-01), Nicholas
patent: 4375717 (1983-03-01), Tonnel
Miller Paul R.
Ozaki G.
U.S. Philips Corporation
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