Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Patent
1996-12-20
1998-12-29
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
117 75, 117921, 117954, C30B 2662
Patent
active
058534776
ABSTRACT:
There is disclosed a method of producing, in large volumes and at low cost, Ta, Nb, Zr and Hf carbide, nitride or carbonitride whiskers, preferably submicron, having excellent reinforcing properties, suitable as reinforcement in a wide range of materials, including metals, intermetallics, plastics, ceramics and metallic bonded hard material. Oxides of Ta, Nb, Zr and Hf or alkali compounds thereof in an amount to satisfy the stoichiometric requirements of the desired carbide or nitride are mixed with the carbon source along with an alkali and/or alkali earth metal halogenide as a volatilization agent for the metal and a catalyst for the whisker growth such as Ni and/or Co. The reactant powders are blended in some typical manner using a high speed blender so as to intimately mix them. Finally, the starting material is subjected to nitriding, carbonizing or carbonitriding heat treatments in order to produce the desired whiskers.
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Coyle R. Tom
Ekelund Magnus
Johnsson Mats
Nygren Mats
Advanced Industrial Materials
Garrett Felisa
Sandvik AB
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