Manufacture of solid state imager having plurality of...

Details Manufacture of solid state imager having plurality of... Manufacture of solid state imager having plurality of...

2005-08-16

2005-08-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000

Reexamination Certificate

active

06929972

ABSTRACT:
A second conductivity type well is formed in a first conductivity type semiconductor substrate. Vertical CCD channels of the first conductivity type are formed in the second conductivity type well. Vertical transfer electrodes are formed above the vertical CCD channels to form vertical CCDs along with the vertical CCD channels. A first impurity diffusion layer is formed in the well by implanting first conductivity type impurities along a first direction crossing the normal direction of the semiconductor substrate. A second impurity diffusion layer is formed in the well by implanting first conductivity type impurities along a second direction crossing the normal direction of the semiconductor substrate. A third impurity diffusion layer of the second conductivity type is formed between the first and second impurity diffusion layer. A fourth impurity diffusion layer of the second conductivity type is formed in the well above the first to third impurity diffusion layers.

REFERENCES:
patent: 5514888 (1996-05-01), Sano et al.
patent: 5804843 (1998-09-01), Furumiya et al.
patent: 6252285 (2001-06-01), Furumiya et al.
patent: 6482669 (2002-11-01), Fan et al.
patent: 2000-125209 (2000-04-01), None
Co-pending U.S. Appl. No. 10/715,484, filed Nov. 19, 2003, by Tetsuo Yamada, “Solid State Image Pickup Device with Wide Dynamic Range”.

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