Manufacture of semiconductor ribbon

Details Manufacture of semiconductor ribbon Manufacture of semiconductor ribbon

1975-12-05

1977-07-19

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

23273SP, 29572, 29580, 29583, 136 89SG, 148171, 156608, 156619, 264145, 264146, 264150, 156617R, 156654, 156662, H01L 21208, H01L 21302, B01J 1718

Patent

active

040366669

ABSTRACT:
A method is provided for producing flat substantially monocrystalline ribbons, e.g. silicon ribbons for use in making flat solar cells. The ribbons are produced by growing substantially monocrystalline flat hollow tubes, and then excising the edge portions of the tubes so that the flat sides of the tubes form discrete ribbons.

REFERENCES:
patent: 3129061 (1964-04-01), Dermatis et al.
patent: 3421946 (1969-01-01), Shaikh et al.
patent: 3433677 (1969-03-01), Robinson
patent: 3486953 (1969-12-01), Ing et al.
patent: 3591348 (1971-07-01), LaBelle
patent: 3686036 (1972-08-01), Gereth et al.
patent: 3811954 (1974-05-01), Lindmayer
patent: 3853489 (1974-10-01), Bailey
LaBelle, Jr.; H. E., "Growth of Controlled Profile Crystals--EFG" Mat. Res. Bull., vol. 6, No. 7, 1971, pp. 581-590.

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