Manufacture of semiconductor devices in which a doping impurity

Details Manufacture of semiconductor devices in which a doping impurity Manufacture of semiconductor devices in which a doping impurity

1977-02-01

1978-11-14

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

29591, 148188, 357 59, B01J 1700

Patent

active

041249348

ABSTRACT:
A method of manufacturing a semiconductor device in which a layer of polycrystalline material having a high impurity concentration is used prior to the diffusion of a thin region having strong surface concentration and prior to providing a contact to the said region.
The polycrystalline layer is comparatively thick prior to the diffusion and is reduced in thickness before the metal contact is provided.

REFERENCES:
patent: 3664896 (1972-05-01), Ducan
patent: 3864217 (1975-02-01), Takahata
patent: 3912557 (1975-10-01), Hochberg
patent: 3918149 (1975-11-01), Roberts
patent: 3935635 (1976-02-01), Botzenhardt

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