Manufacture of semiconductor device with self-aligned doping

Details Manufacture of semiconductor device with self-aligned doping Manufacture of semiconductor device with self-aligned doping

1997-02-28

1998-03-24

Dutton, Brian

Fishing, trapping, and vermin destroying

437 57, 437231, H01L 21265, H01L 21469

Patent

active

057312141

ABSTRACT:
Ion doped source and drain regions S.sub.11 and D.sub.11 are formed in a p-type well region through impurity ion implantation by using a resist layer as a mask. Thereafter, SOG (spin-on-glass) is coated on the upper surface of the substrate and cured to form an SOG layer which fills the opening of the resist layer. The resist layer and SOG layer left on it are removed, and then ion implanted source and drain regions S.sub.12 and D.sub.12 are formed in an n-type well region through impurity ion implantation by using the SOG layer as a mask. The ion implanted source and drain regions S.sub.12 and D.sub.12 are formed in a self-alignment manner relative to the ion implanted source and drain regions S.sub.11 and D.sub.11. The SOG layer may be formed by etching back a thick SOG layer. A simple method of forming an impurity doped region in a self-alignment manner relative to another impurity doped region.

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patent: 4767721 (1988-08-01), Liao et al.
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