Manufacture of semiconductor device with ashing and etching

Details Manufacture of semiconductor device with ashing and etching Manufacture of semiconductor device with ashing and etching

1995-03-24

1997-10-28

McPherson, John A.

Fishing, trapping, and vermin destroying

437229, 430316, 430330, 1566431, 1566531, 15665911, H01L 21306

Patent

active

056817800

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of: forming an insulating film on a silicon substrate; forming a resist pattern on the insulating film; etching the insulating film by using the resist pattern as an etching mask to expose a surface of the silicon substrate; and ashing the resist pattern and etching a surface layer at the exposed surface of the silicon substrate at the same time. The ashing/etching step may be performed first at a high temperature at or above 40.degree. C. and then at a lower temperature.

REFERENCES:
patent: 4292384 (1981-09-01), Straughan et al.
patent: 4814041 (1989-03-01), Auda
patent: 4861424 (1989-08-01), Fujimura et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5099100 (1992-03-01), Bersin et al.
patent: 5164034 (1992-11-01), Arai et al.

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