Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-03-25
2008-08-12
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C257SE27104, C257SE29272, C257SE21208, C257SE21436
Reexamination Certificate
active
07410812
ABSTRACT:
A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf1-xAlxO:N film (0.1<x<0.3) having a higher specific dielectric constant than that of silicon oxide, and incorporating N, by thermal CVD. The method can form an oxide film of Hf1-xAlxO (0<x<0.3) having desired characteristics, as a gate insulation film.
REFERENCES:
patent: 6444592 (2002-09-01), Ballantine et al.
patent: 6475928 (2002-11-01), Berenguer et al.
patent: 6483172 (2002-11-01), Cote et al.
patent: 6642131 (2003-11-01), Harada
patent: 6720259 (2004-04-01), Londergan et al.
patent: 6762114 (2004-07-01), Chambers
patent: 2001/0051444 (2001-12-01), Lim et al.
patent: 2002/0195643 (2002-12-01), Harada
patent: 2003/0040196 (2003-02-01), Lim et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2004/0011279 (2004-01-01), Joo
patent: 2004/0127003 (2004-07-01), Chambers
patent: 2004/0161899 (2004-08-01), Luo et al.
patent: 0 900 859 (1999-03-01), None
patent: 0 942 464 (1999-09-01), None
patent: 1 127 956 (2001-08-01), None
patent: 2001-267316 (2001-09-01), None
patent: 2001-274378 (2001-10-01), None
patent: 2002-289615 (2002-10-01), None
patent: 2002-289615 (2002-10-01), None
patent: 2003-8005 (2003-01-01), None
patent: 2003-008005 (2003-01-01), None
patent: 2003-0018134 (2003-03-01), None
European Search Report dated Feb. 16, 2007, issued in corresponding European Patent Application No. 03 70 8659.
Hyung-Seok Jung et al., Improved Current Performance of CMOSFETs with Nitrogen Incorporated HfO2-Al2O3Laminate Gate Dielectric, IEEE, Advanced Process Development Project, System LSI Business, Samsung Electronics Co., Ltd., et al., 2002, pp. 853-856.
W. Zhu et al., HfO2and HfAIO for CMOS: Thermal Stability and Current Transport, IEEE, Yale University, 2001, pp. 463-466.
M.R. Visokay et al., Application of HfSiON as a gate dielectric material, American Institute of Physics, Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002, pp. 3183-3185.
Hang Hu et al, MIM Capacitors Using Atomic-Layer-Deposited High-κ(HfO2)1−x(AL2O3(xDielectrics, IEEE Electron Device Letters, vol. 24, No. 2, Feb. 2003, pp. 60-62.
Chinese Office Action dated Oct. 13, 2006, issued in corresponding Chinese Application No. 03820517.3.
Korean Office Action dated Oct. 31, 2006, issued in corresponding Korean Application No. 10-2005-7004833.
W.J. Zhu et al., “Effect of A1 Inclusion in HfO2on the Physical and Electrical Properties of the Dielectrics”, IEEE Electron Device Letters, vol. 23, No. 11, Nov. 2002, pp. 649-651.
Japanese Office Action dated Apr. 13, 2007 (mailing date), issued in corresponding Japanese Patent Application No. 2004-569555.
Estrada Michelle
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , L.L.P.
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