Manufacture of probe unit having lead probes extending...

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Beam lead formation

Reexamination Certificate

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C438S463000, C438S611000

Reexamination Certificate

active

07087501

ABSTRACT:
A sacrificial layer is formed in a recess of a substrate, and leads extending from the substrate into an area of the sacrificial layer are formed. A cut is formed from the bottom surface of the substrate, the cut extending from the bottom surface to the area of the sacrificial layer via the substrate, then the sacrificial layer is removed. A probe unit can be obtained having the leads whose front portions extend beyond the edge of the substrate. A through conductor may be formed in a through hole formed in a substrate. Leads may be formed on a photosensitive etching glass substrate to thereafter selectively etch the chemically cutting type glass.

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Patent Abstracts of Japan, Suzuki et al. “Probe Unit and Manufacture Therof”, Publication No. 08-015318, English Translation.

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