Manufacture of MOSFET with metal silicide contact

Details Manufacture of MOSFET with metal silicide contact Manufacture of MOSFET with metal silicide contact

1985-06-24

1986-01-14

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29590, 148 15, 148188, H01L 21385, H01L 21443

Patent

active

045638055

ABSTRACT:
Polysilicon elements of integrated circuits, for example gates (24) or interconnects, are provided with metallic silicide layers (26) in order to take advantage of the lower resistivity thereof. The polysilicon elements are defined on an oxide layer (23) disposed on a silicon substrate (20) before polysilicon metallization. After polysilicon metallization the metal and polysilicon are caused to interdiffuse to form silicide layers (26) covering the polysilicon elements (24).

REFERENCES:
patent: 3617824 (1971-11-01), Shinoda et al.
patent: 4319395 (1982-03-01), Lund et al.
patent: 4415383 (1983-11-01), Naem et al.
patent: 4432133 (1984-02-01), Furuya
patent: 4521952 (1985-06-01), Riseman

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