Metal working – Barrier layer or semiconductor device making
Patent
1995-09-07
1999-09-07
Booth, Richard A.
Metal working
Barrier layer or semiconductor device making
438906, 1341022, 134902, H01L 2100, H01L 2164
Patent
active
RE0362905
ABSTRACT:
Semiconductor wafers and other electronic parts which similarly require ultra-high purity manufacturing environments are treated with ultra-high purity liquid cleaning and etching agents prepared at the site of use from gaseous raw materials which have been purified to a level compatible with semiconductor manufacturing standards, combined when appropriate with ultra-pure water.
REFERENCES:
patent: 3663382 (1972-05-01), Garris
patent: 3760822 (1973-09-01), Evans
patent: 3869313 (1975-03-01), Jones et al.
patent: 4557785 (1985-12-01), Ohkuma
patent: 4749440 (1988-06-01), Blackwood et al.
patent: 4778532 (1988-10-01), McConnell et al.
patent: 4788043 (1988-11-01), Kagiyama et al.
patent: 4828660 (1989-05-01), Clark et al.
patent: 4844719 (1989-07-01), Toyomoto et al.
patent: 4855023 (1989-08-01), Clark et al.
patent: 4879041 (1989-11-01), Kurokawa et al.
patent: 4892625 (1990-01-01), Shimizu et al.
patent: 4899767 (1990-02-01), McConnell et al.
patent: 4900395 (1990-02-01), Syverson et al.
patent: 4917123 (1990-04-01), McConnell et al.
patent: 4936955 (1990-06-01), Dobson et al.
patent: 4980032 (1990-12-01), Dobson et al.
patent: 4985228 (1991-01-01), Kirksey
patent: 5000795 (1991-03-01), Chung et al.
patent: 5032218 (1991-07-01), Dobson
patent: 5061348 (1991-10-01), McCormick et al.
patent: 5092937 (1992-03-01), Ogura et al.
patent: 5377708 (1995-01-01), Bergman et al.
J.E. Martyak et al., "Reviewing Analytical Techniques for the Characterization of Deionized Water", Microcontamination. pp. 19-26, Feb. 1991.
English translation of Decision of Rejection issued in Japanese related Application No. 511640/92, Jul. 1998.
Baird Stephen S.
Clark R. Scot
Hoffman Joe G.
Air Liquide Electronics Chemicals & Services, Inc.
Booth Richard A.
Wendt Jeffrey L.
LandOfFree
Manufacture of high precision electronic components with ultra-h does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacture of high precision electronic components with ultra-h, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of high precision electronic components with ultra-h will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1791317