Manufacture of electron emitter utilizing reaction film

Details Manufacture of electron emitter utilizing reaction film Manufacture of electron emitter utilizing reaction film

1996-09-06

1998-02-24

Bradley, P. Austin

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

445 24, H01J 130, H01J 902

Patent

active

057206422

ABSTRACT:
A first recess having a vertical or generally vertical side wall is formed in a surface layer of a substrate. A polysilicon film as a gate electrode material film is deposited on the substrate by film deposition process with poor step coverage. The polysilicon film is oxidized to leave the polysilicon film only outside of the first recess and form a silicon oxide film having a second recess with a sharp edge over the first recess. An emitter electrode material film is formed on the silicon oxide film, filling the second recess with a field emission emitter. An opening is formed in the emitter electrode material film to etch and remove the silicon oxide films around and under the field emission emitter. A field emission emitter having a tip with a small radius of curvature and a small apex angle can be manufactured in self-alignment with a gate opening, with simple processes, with good controllability, to provide high electric performance.

REFERENCES:
patent: 5100355 (1992-03-01), Marcus et al.
patent: 5141459 (1992-08-01), Zimmerman
patent: 5203731 (1993-04-01), Zimmerman
patent: 5334908 (1994-08-01), Zimmerman
patent: 5599749 (1997-02-01), Hattori
patent: 5603649 (1997-02-01), Zimmerman
patent: 5643032 (1997-07-01), Cheng et al.

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