Manufacture of carbides and the like

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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Details

423345, 423346, B01K 100, C01B 3136

Patent

active

041535278

ABSTRACT:
A metal processing furnace of the indirect arc type having opposed electrodes projected into and establishing an ionized atmosphere in the furnace crucible is provided with apparatus that introduces a finely divided charge mixture consisting essentially of silica and coke into the system for free-fall into and through the ionized atmosphere. Following reaction of the mixture's ingredients in the ionized atmosphere, silicon carbide crystals are deposited at the bottom of the furnace interior below the ionized atmosphere for subsequent collection and removal from within the furnace system. By control of charge composition and process parameters, silicon carbide crystals having predominantly either alpha or beta crystalline structures and with crystal sizes predominantly in the range of 250 to 3,000 microns are produced.

REFERENCES:
patent: 1576275 (1926-03-01), Hartman
patent: 2677627 (1954-05-01), Montgomery et al.
patent: 3485591 (1969-12-01), Evans et al.

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