Manufacture of application-specific IC

Details Manufacture of application-specific IC Manufacture of application-specific IC

1994-11-30

1998-12-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Rendering selected devices operable or inoperable

438132, 438601, 438702, 438940, 438717, 438736, 438671, H01L 2128, H01L 2144

Patent

active

058518568

ABSTRACT:
After an insulating film is deposited over metal patterns, a resist film is coated over the whole surface of the insulating film until the surface of the resist film becomes flat. The resist film is removed by reactive ion etching until a partial surface area of the insulating film deposited over the metal patterns is exposed. Another photoresist film is coated on the surface to cover a part of the exposed areas of the insulating film and the resist film, exposed and developed to form a resist mask. The area not covered with the resist mask and the resist film is selectively removed by anisotropic etching. The resist mask and the resist film are removed to obtain a window having a width equal to the width of a convex of the insulating film. A method of manufacturing a semiconductor device that is capable of exposing a metal wiring layer at a high precision is provided.

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