Manufacture of an I.sup.2 device utilizing staged selective diff

Details Manufacture of an I.sup.2 device utilizing staged selective diff Manufacture of an I.sup.2 device utilizing staged selective diff

1977-07-29

1979-03-13

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577R, 29578, 148174, 148187, 148188, 357 35, 357 36, 357 46, 357 59, 357 92, 427 86, H01L 2120, H01L 21225

Patent

active

041441060

ABSTRACT:
During the manufacture of an I.sup.2 L device, to achieve diffusion steps for a collector region and a collar region at the same time, polycrystal silicon is deposited over the whole surface of the collector region and then an impurity is diffused simultaneously into the collector region and the collar region.

REFERENCES:
patent: 3502517 (1970-03-01), Sussman
patent: 3657612 (1972-04-01), Wiedmann
patent: 3787253 (1974-01-01), Ashar
patent: 3904450 (1975-09-01), Evans et al.
patent: 3922565 (1975-11-01), Berger et al.
patent: 4029527 (1977-06-01), Glasl et al.
patent: 4058419 (1977-11-01), Tokumaru et al.
patent: 4064526 (1977-12-01), Tokumaru et al.
Blum et al., "Monolithic Planar . . . One Diffusion Step," IBM Tech. Discl. Bull., vol. 14, No. 6, Nov. 1971, p. 1808.
Carlsen, G. S., "Multiple Diffusion . . . from Single Diffusion," Ibid, vol. 9, No. 10, Mar. 1967, pp. 1456-1458.

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