Manufacture of a substrate structure for a composite semiconduct

Details Manufacture of a substrate structure for a composite semiconduct Manufacture of a substrate structure for a composite semiconduct

1989-08-21

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 78, 437 90, 148DIG12, 148DIG135, H01L 2120, H01L 21306

Patent

active

049487485

ABSTRACT:
A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.

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Lasky et al., "Silicon-on-Insulator (SOI) by Bonding and Etch-Back," IEDM Technical Digest, pp. 684-687, Dec. 1985.

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