Manufacture of a shallow trench isolation device by exposing neg

Details Manufacture of a shallow trench isolation device by exposing neg Manufacture of a shallow trench isolation device by exposing neg

1998-11-27

1999-12-07

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, H01L 21762

Patent

active

059982799

ABSTRACT:
This is a method of manufacture of a shallow trench isolation semiconductor device with STI trenches where an active area mask is provided for exposure of an active area during manufacture of the device comprises several following steps. The STI trenches are filled by coating the device with a blanket coating of silicon oxide. Coat the device with negative resist. Next, expose the negative resist layer with the active area mask for the device providing windows through the negative photoresist layer with an level of exposure energy provided to broaden the dimensions of exposure substantially laterally of the active area mask. Then, etch back the silicon oxide layer to a thin layer below the windows through the negative photoresist layer. Strip the resist. Finally, perform chemical mechanical planarization to remove excess silicon oxide from the surface.

REFERENCES:
patent: 5350486 (1994-09-01), Huang
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5641704 (1997-06-01), Paoli et al.
patent: 5691215 (1997-11-01), Dai et al.
patent: 5728618 (1998-03-01), Tseng

Affiliated with

Also associated with

Rating

Manufacture of a shallow trench isolation device by exposing neg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacture of a shallow trench isolation device by exposing neg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of a shallow trench isolation device by exposing neg will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-823093