Manufacture of a semiconductor device with selectively deposited

Details Manufacture of a semiconductor device with selectively deposited Manufacture of a semiconductor device with selectively deposited

1996-10-21

1999-04-20

Bowers, Charles

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

438341, 438503, 438504, 438795, 438906, 438DIG17, H01L 21205

Patent

active

058952489

ABSTRACT:
A method of a manufacturing a semiconductor device whereby a layer of insulating material and a layer of polycrystalline silicon are provided on a surface of a monocrystalline wafer. A window is then provided in the layer of polycrystalline silicon and a protective layer is formed on the wall of this window. Then the layer of insulating material is removed within the window and below an edge of the layer of polycrystalline silicon adjoining the window. Subsequently, silicon is selectively grown on the mono- and polycrystalline silicon exposed in and adjacent the window from a vapor comprising chlorine as well as silicon at low pressure. The silicon wafer is cleaned before the selective deposition through heating in an atmosphere comprising hydrogen at a pressure of at least 1 atmosphere. This cleaning safeguards that the deposited monocrystalline silicon will always be connected to the layer of polycrystalline silicon by the deposited polycrystalline silicon.

REFERENCES:
patent: 4292343 (1981-09-01), Plaettner et al.
patent: 5119541 (1992-06-01), Ohmi et al.
patent: 5202284 (1993-04-01), Kamins et al.
patent: 5326718 (1994-07-01), Klose et al.
"A Self-Aligned Selective MBE Technology For High-Performance Bipolar Transistors", by F. Sata et al., Proceedings IEEE, 1990, Section 25.7.1, pp. 1-4.

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