Manufacture of a semiconductor device

Details Manufacture of a semiconductor device Manufacture of a semiconductor device

2007-10-02

2007-10-02

Landau, Matthew C. (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S046000, C257S014000, C257S094000, C257SE33028

Reexamination Certificate

active

10974226

ABSTRACT:
A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.

REFERENCES:
patent: 4400256 (1983-08-01), Riley
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 6537513 (2003-03-01), Amano et al.
patent: 2002/0048836 (2002-04-01), Kano et al.
patent: 2003/0138976 (2003-07-01), Sugawara
patent: 2003/0143770 (2003-07-01), Takeya
patent: 0325100.6 (2003-10-01), None
patent: 2002-043618 (2002-02-01), None

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