Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-06-28
2011-06-28
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S044000, C438S045000, C438S046000, C257SE21090, C257SE21093, C257SE21098, C257SE21110
Reexamination Certificate
active
07968363
ABSTRACT:
A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer.@(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer.@(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).
REFERENCES:
patent: 7482618 (2009-01-01), Kato et al.
patent: 2003/0186088 (2003-10-01), Kato et al.
patent: 2005/0145840 (2005-07-01), Kato et al.
patent: 2006/0170013 (2006-08-01), Kato et al.
patent: 2002-76026 (2002-03-01), None
patent: 2004-363382 (2004-12-01), None
patent: 2005-197410 (2005-07-01), None
Kato et al., “High-quality ZnO epilayers grown on Zn-face Zno substrates by plasma-assisted molecular beam epitaxy,” J. of Crystal Growth, 265, 2004, pp. 375-381.
Ko et al., “Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy” Journal of Applied Physics, vol. 92, No. 8, Oct. 15, 2002, pp. 4354-4360.
Kato et al., “MBE growth of Zn-polar ZnO on MOCVD-ZnO templates,” Phys. Stat. Sol., 241, 2004, pp. 2825-2829.
Japanese Office Action in a counterpart application No. 2005-317973, dated Apr. 5, 2011, citing Foreign Patent documents Nos. 1-3 above and Non-Patent Literature Kato et al., “High-quality ZnO epilayers grown on Zn-face Zno substrates by plasma-assisted molecular beam epitaxy,” Journal of Crystal Growth, 265, 2004, pp. 375-381, which has been submitted in a previous IDS. Partial translation of the Office Action is attached as a concise explanation of revelance.
Kato Hiroyuki
Kotani Hiroshi
Ogawa Akio
Sano Michihiro
Bryant Kiesha R
Chen Yoshimura LLP
Stanley Electric Co. Ltd.
Yang Minchul
LandOfFree
Manufacture method for ZnO based semiconductor crystal and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacture method for ZnO based semiconductor crystal and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture method for ZnO based semiconductor crystal and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2712437