Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-08-24
2008-10-21
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S002000, C117S003000, C117S089000, C117S095000
Reexamination Certificate
active
07438762
ABSTRACT:
A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
REFERENCES:
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patent: 1 349 203 (2003-10-01), None
patent: 2003-282602 (2003-10-01), None
Kato H et al.: “Effects of slight misorientation of GaN templates on Molecular-beam-epitaxy growth of ZnO,” J. of Appl. Phys AIP USA vol. 92, No. 4, Aug. 15, 2002.
Ko H-J et al.: “Improvement of the quality of ZnO substratesw by annealing,” J. of Crystal Growth, Elsevier, Amsterdam, NL, vol. 269, No. 2-3, Sep. 1, 2004.
European Search Report dated Jan. 16, 2007 in the counterpart EP application.
Communication from the EPO in the counterpart EP application.
Cho Meoung Whan
Kato Hiroyuki
Maeda Katsumi
Sano Michihiro
Yao Takafumi
Chen Yoshimura LLP
Hiteshew Felisa C
Stanley Electric Co., Ltd., Tokyo Denpa Co., Ltd., and Tohoku Un
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