Manufacture and cleaning of a semiconductor

Details Manufacture and cleaning of a semiconductor Manufacture and cleaning of a semiconductor

2007-05-01

2007-05-01

Norton, Nadine G. (Department: 1765)

Compositions

Etching or brightening compositions

C252S079200, C252S079400, C438S745000

Reexamination Certificate

active

10369273

ABSTRACT:
Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a novel wet etch comprising an oxidizing agent and a chelating agent selectively removes the extrusions from a wordline in a memory array. In another embodiment, the wet etch includes a base that adjusts the pH of the etch to selectively remove certain extrusions relative to other substances in the wordline. Accordingly, new metal silicide structures can be used to form novel wordlines and other types of integrated circuits.

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