Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Patent
1991-03-29
1993-07-27
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
257 15, 365173, 428611, H01L 2348
Patent
active
052312941
ABSTRACT:
A ferromagnetic thin film of manganese and aluminum having varied atomic concentrations of manganese and aluminum in the direction perpendicular to the film plane, preferably the Mn atomic concentration being preferably in a range of 45 to 65% by atom, has a spontaneous magnetization equivalent to that of the bulk of manganese-aluminum alloy and also a high magnetic anisotropy.
In addition, a magnetic recording medium comprises a substrate and a magnetic film formed on the substrate, the magnetic film being a thin film in a stacked structure of thin layers of manganese and thin layers of aluminum, laid open upon one another alternatingly in the film thickness direction.
Finally, a manganese-silicon magnetic multi-layer film comprises thin layers of manganese and thin layers of silicon laid upon one another alternatingly.
REFERENCES:
patent: 3518639 (1970-06-01), Feldtkeller et al.
patent: 4201809 (1980-05-01), Ogawa et al.
patent: 5032465 (1991-07-01), Maeda
Synthesis of ferromagnetic .pi. phase of Mn-Al films by sputtering A. Morisako and M. Matsumoto Apr. 15, 1987 J. Appl. Phys. 61 pp. 4281-4283.
Ferromagnetic resonance in Co-Cr Multilayer films B. L. Ramakrishna et al. J. Appl. Phys. 61 Apr. 15, 1987 pp. 4290-4292.
Futamoto Masaaki
Hirayama Yoshiyuki
Honda Yukio
Takagi Kazumasa
Takeuchi Teruaki
Hitachi , Ltd.
Mintel William
Potter Roy
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