Making walled emitter bipolar transistor with reduced base narro

Details Making walled emitter bipolar transistor with reduced base narro Making walled emitter bipolar transistor with reduced base narro

1992-11-24

1994-08-16

Thomas, Tom

Fishing, trapping, and vermin destroying

437 32, H01L 21265

Patent

active

053386957

ABSTRACT:
An improved, walled-emitter, bipolar transistor and a method for fabricating such a transistor is disclosed. The method includes the step of separately doping the edges of the active base that are adjacent to the isolation oxide in order to increase the doping level at the edges and thus counteract base narrowing that would otherwise be present.

REFERENCES:
patent: 4199380 (1980-04-01), Farrell et al.
patent: 4333774 (1982-06-01), Kamioka
patent: 4441932 (1984-04-01), Akasaka et al.
patent: 4465528 (1984-08-01), Goto
patent: 4624046 (1986-11-01), Shideler et al.

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