Making semiconductor structure with improved phosphosilicate gla

Details Making semiconductor structure with improved phosphosilicate gla Making semiconductor structure with improved phosphosilicate gla

1978-05-01

1980-03-04

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, 427 86, H01L 21225

Patent

active

041916034

ABSTRACT:
In a field effect device such as a charge coupled device or field effect transistor in which at least two levels of polycrystalline silicon conductors are used; these two levels of polycrystalline silicon are isolated from one another with a dielectric layer. Disclosed is a dielectric layer of reflowed phosphosilicate glass (PSG) on top surfaces of a polycrystalline silicon layer which may be doped by phosphorous impurities diffusing from the PSG.

REFERENCES:
patent: 3897282 (1975-07-01), White
patent: 3915767 (1975-10-01), Welliver
patent: 4028150 (1977-06-01), Collins et al.
patent: 4075045 (1978-02-01), Rideout
patent: 4085498 (1978-04-01), Rideout

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