Making deep power diodes

Details Making deep power diodes Making deep power diodes

1976-05-11

1977-12-20

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148177, 148187, 252 623GA, H01L 21208

Patent

active

040639657

ABSTRACT:
A process for forming aluminum doped silicon semiconductor material for large area semiconductor devices embodies thermal gradient zone melting processing and migration of a molten zone of a predetermined thickness to assure stability of the molten zone while migrating.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3205101 (1965-09-01), Mlavsky et al.
patent: 3484302 (1969-12-01), Maeda et al.
patent: 3520735 (1970-07-01), Kurata

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