Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2006-06-23
2009-08-25
Trinh, Minh (Department: 3729)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C029S025350, C029S025420, C361S311000, C361S306200, C438S106000
Reexamination Certificate
active
07578858
ABSTRACT:
A method of making capacitor structure includes arranging first-layer conducting strips on a first layer of an integrated circuit chip, and arranging second-layer conducting strips on a second layer of the integrated circuit chip. The first-layer conducting strips and the second-layer conducting strips can be arranged as respective piecewise spirals. The second-layer conducting strips are arranged overlying and electrically separated from the first-layer conducting strips, and the method further includes electrically connecting the first-layer conducting strips with the second-layer conducting strips.
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Trinh Minh
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