Making a short-channel FET

Details Making a short-channel FET Making a short-channel FET

1979-05-21

1981-10-13

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, H01L 2126

Patent

active

042940028

ABSTRACT:
An improved Field Effect Transistor (FET) with a very small effective channel length is made by using, a first ion implantation to produce the source and drain regions of the FET and a second very shallow ion implantation next to the source region to produce the effective short channel of the FET. The effective channel of the FET is implanted to only a small fraction of the depth of the source and drain. The use of implantations instead of diffusions in the described manner in combination with the use of the shallow effective channel in the FET provides superior control over the threshold voltage of the FET and increases the operating speed of the FET.

REFERENCES:
patent: 3996655 (1976-12-01), Cunningham et al.
patent: 4038107 (1977-07-01), Marr et al.
patent: 4173818 (1979-11-01), Bassous
patent: 4208780 (1980-06-01), Richman

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