Making a semiconductor photodetector

Details Making a semiconductor photodetector Making a semiconductor photodetector

1988-08-22

1990-03-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG15, 148DIG72, 148DIG97, 148DIG120, 156610, 357 30, 437 81, 437121, 437130, 437133, 437916, 437976, H01L 3118

Patent

active

049065831

ABSTRACT:
A semiconductor photodetector, such as a PIN photodiode and an avalanche photodiode, comprising an InP substrate, a first InP layer, a GaInAs or GaInAsP light absorbing layer, and a second InP layer. All of the layers are successively grown by a vapor phase epitaxial process wherein the lattice constant of the GaInAs (GaInAsP) layer is larger than that of the InP layer at room temperature. The photodetector has a low dark current.

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